Saturation of 640-nm absorption in Cr^4+:YAG for an InGaN laser diode pumped passively Q-switched Pr^3+:YLF laser
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منابع مشابه
Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser
the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr:Y...
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We demonstrated laser operation of a passively Q-switched diode-pumped Er:YAG solid-state laser emitting at 1645 or 1617 nm depending on the initial transmission of the Cr:ZnSe saturable absorber. The crystal emitted up to 10 W at 1645 nm and up to 8 W at 1617 nm in CW mode while pumped with 65 W of incident pump power at 1533 nm. In passive Q-switched mode with 40 W of incident power, a Cr:ZnS...
متن کاملDiode edge-pumped passively Q-switched microchip laser
There is an increasing demand for high-intensity subnanosecond lasers for emerging industrial applications. While femtosecond and picosecond laser sources are considered promising, they suffer from the significant drawbacks of increased complexity and cost. In this regard, we demonstrate a unique edge-pumped passively Q-switched Nd∶YAG∕Cr4þ∶YAG microchip laser. The microchip is made of a Nd∶YAG...
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We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.
متن کاملInGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.
A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.
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ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.019382